English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The ferroelectric semiconductor $\alpha$-SnTe has been regarded as atopological crystalline insulator and the dispersion of its surface states hasbeen intensively measured with angle-resolved photoemission spectroscopy(ARPES) over the last decade. However, much less attention has been given tothe impact of the ferroelectric transition on its electronic structure, and inparticular on its bulk states. Here, we investigate the low-energy electronicstructure of $\alpha$-SnTe with ARPES and follow the evolution of thebulk-state Rashba splitting as a function of temperature, across itsferroelectric critical temperature of about $T_c\sim 110$ K. Unexpectedly, weobserve a persistent band splitting up to room temperature, which is consistentwith an order-disorder contribution to the phase transition that requires thepresence of fluctuating local dipoles above $T_c$. We conclude that notopological surface state can occur at the (111) surface of SnTe, at odds withrecent literature.

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature