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Monolithic integration of novel materials for unprecedented device functionswithout modifying the existing photonic component library is the key toadvancing heterogeneous silicon photonic integrated circuits. To achieve this,the introduction of a silicon nitride etching stop layer at selective area,coupled with low-loss oxide trench to waveguide surface, enables theincorporation of various functional materials without disrupting thereliability of foundry-verified devices. As an illustration, two distinctchalcogenide phase change materials (PCM) with remarkable nonvolatilemodulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithicback-end-of-line integrated into silicon photonics. The PCM enables compactphase and intensity tuning units with zero-static power consumption. Takingadvantage of these building blocks, the phase error of a push-pull Mach-Zehnderinterferometer optical switch could be trimmed by a nonvolatile phase shifterwith a 48% peak power consumption reduction. Mirco-ring filters with arejection ratio >25dB could be applied for >5-bit wavelength selectiveintensity modulation, and waveguide-based >7-bit intensity-modulation photonicattenuators could achieve >39dB broadband attenuation. The advanced "Zerochange" back-end-of-line integration platform could not only facilitate theintegration of PCMs for integrated reconfigurable photonics but also open upthe possibilities for integrating other excellent optoelectronic materials inthe future silicon photonic process design kits.

"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics