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III-nitride wide bandgap semiconductors exhibit large exciton bindingenergies, preserving strong excitonic effects at room temperature. On the otherhand, semiconducting two-dimensional (2D) materials, including MoS$_2$, alsoexhibit strong excitonic effects, attributed to enhanced Coulomb interactions.This study investigates excitonic interactions between surface GaN quantum well(QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacingbetween these two excitonic systems. Optical property investigation firstdemonstrates the effective passivation of defect states at the GaN surfacethrough MoS$_2$ coating. Furthermore, a strong interplay is observed betweenMoS$_2$ monolayers and GaN QW excitonic transitions. This highlights theinterest of the 2D material/III-nitride QW system to study near-fieldinteractions, such as F\"orster resonance energy transfer, which could open upnovel optoelectronic devices based on such hybrid excitonic structures.

Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer