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An unsaturated linear magnetoresistance (LMR) has attracted widely attentionbecause of potential applications and fundamental interest. By controllinggrowth temperature, we realized a metal-to-insulator transition in Al2O3/SrTiO3heterostructures. The LMR is observed in metallic samples with electronmobility varying over three orders of magnitude. The observed LMR cannot beexplained by the guiding center diffusion model even in samples with very highmobility. The slope of the observed LMR is proportional to Hall mobility, andthe crossover field, indicating a transition from quadratic (at low fields) tolinear (at high fields) field dependence, is proportional to the inverse Hallmobility. This signifies that the classical model is valid to explain theobserved LMR. More importantly, we develop an analytical expression accordingto the effective-medium theory that is equivalent to the classical model. Andthe analytical expression describes the LMR data very well, confirming thevalidity of the classical model.

Disorder-induced linear magnetoresistance in Al$_2$O$_3$/SrTiO$_3$ heterostructures