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Semiconductor materials play an important role as transducers of electricalenergy in betavoltaic batteries. Optimal selection of effective factors willincrease the efficiency of these batteries. In this study, based on commonsemiconductors and relying on increasing the maximum efficiency of betavoltaicbatteries and the possibility of using 3H, 63Ni, and 147Pm beta sources, theindicators and criteria for optimal selection of semiconductor materials aredetermined. Evaluation criteria include the backscattering coefficient of betaparticles from semiconductors, efficiency of electron-hole pairs generation,electronic specifications and properties, radiation damage threshold, radiationyield, stopping power and penetration of beta particles in semiconductors,physical characteristics, temperature tolerance, accessibility, and fabricationare considered. Conventional semiconductors have been quantitatively evaluatedbased on these criteria and compared with silicon semiconductors. 10semiconductors, , diamond, 2H-SiC, 3C-SiC, 4H-SiC, AlN, MgO, B4C with effectiveatomic number less than 14 and bandgap energy above 1.12 eV at room temperature(300K) compared to Silicon semiconductors are evaluated. Finally, according tothe evaluation indicators, Diamond, c-BN, and 4H-SiC are more suitablesemiconductors in terms of efficiency have selected, respectively. The resultsindicate that for planar batteries, a betavoltaic semiconductor type junctionfor Schottky diamond with 147pm radioisotope, and 4H-SiC semiconductors with63Ni or 3H radioisotopes, and for three-dimensional structures of betavoltaicbatteries, Si combination with 147pm or 63Ni radioisotopes is recommended.

Theoretical study of conventional semiconductors as transducers to increase power and efficiency in betavoltaic batteries