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In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was depositedon AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO andSiO$_{2}$, followed by rapid thermal annealing in a nitrogen (N$_{2}$)environment. The X-ray photoelectron spectroscopy (XPS) analysis confirmed thestoichiometric Mg-Silicate (MgSiO$_{3}$) after being annealed at a temperatureof 850 $^\circ$C for 70 seconds. Atomic force microscopy (AFM) was employed tomeasure the root mean square (RMS) roughness (2.20 nm) of the Mg-Silicate. Asignificant reduction in reverse leakage current, by a factor of three ordersof magnitude, was noted for the Mg-Silicate/AlGaN/GaN metal-oxide-semiconductor(MOS) diode in comparison to the Schottky diode. The dielectric constant ofMg-Silicate($\mathcal{E}_{Mg-Silicate}$) and the interface density of states(D$_{it}$) with AlGaN were approximated at $\sim$ 6.6 and 2.0 $\times$10$^{13}$ cm$^{-2}$eV$^{-1}$ respectively, utilizing capacitance-voltage (CV)characteristics.

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)