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(111) NiO epitaxial layers embedded with crystallographically orientedNi-clusters are grown on c-GaN/Sapphire templates using pulsed laser depositiontechnique. Structural and magnetic properties of the films are examined by avariety of techniques including high resolution x-ray diffraction,precession-electron diffraction and superconducting quantum interference devicemagnetometry. The study reveals that the inclusion, orientation, shape, size,density and magnetic properties of these clusters depend strongly on the growthtemperature (TG). Though, most of the Ni-clusters are found to becrystallographically aligned with the NiO matrix with Ni(111) parallel toNiO(111), clusters with other orientations also exist, especially in samplesgrown at lower temperatures. Average size and density of the clusters increasewith TG . Proportion of the Ni(111) parallel to NiO(111) oriented clusters alsoimproves as TG is increased. All cluster embedded films show ferromagneticbehaviour even at room temperature. Easy-axis is found to be oriented in thelayer plane in samples grown at relatively lower temperatures. However, itturns perpendicular to the layer plane for samples grown at sufficiently hightemperatures. This reversal of easy-axis has been attributed to the sizedependent competition between the shape, magnetoelastic and the surfaceanisotropies of the clusters. This composite material thus has great potentialto serve as spin-injector and spinstorage medium in GaN based spintronics ofthe future.

Ni cluster embedded (111)NiO layers grown on (0001)GaN films using pulsed laser deposition technique