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The conventional Hall effect is linearly proportional to the field componentor magnetization component perpendicular to a film. Despite the increasingtheoretical proposals on the Hall effect to the in-plane field or magnetizationin various special systems induced by the Berry curvature, such anunconventional Hall effect has only been experimentally reported in Weylsemimetals and in a heterodimensional superlattice. Here, we report anunambiguous experimental observation of the in-plane Hall effect (IPHE) incentrosymmetric rutile RuO2 and IrO2 single-crystal films under an in-planemagnetic field. The measured Hall resistivity is found to be proportional tothe component of the applied in-plane magnetic field along a particular crystalaxis and to be independent of the current direction or temperature. Both theexperimental observations and theoretical calculations confirm that the IPHE inrutile oxide films is induced by the Lorentz force. Our findings can begeneralized to ferromagnetic materials for the discovery of in-plane anomalousHall effects and quantum anomalous Hall effects. In addition to significantlyexpanding knowledge of the Hall effect, this work opens the door to explore newmembers in the Hall effect family.

In-plane Hall effect in rutile oxide films induced by the Lorentz force