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This work focuses on the fabrication of niobium through silicon vias (TSV)superconductors interconnects. The effect of supercycle of sequential oxidationand chemical etching process on the through-etch wall quality was investigated.It was experimentally shown that the use of supercycle in the fabricationprocess leads to significant improvement of the TSV wall quality and removal ofthe defect type - scallops. After 12 times repetitions of supercycles adissipative bonding of superconducting strips on the front and back side of thesample is observed. The critical current density of such coupling is 5x104A/cm2. The critical ratio of substrate thickness to hole diameter at whichelectrical coupling is formed is 3 : 1.

Superconducting TSV contact for cryoelectronic devices