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Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such asFe(001)/MgO(001)/Fe(001), have been widely used as the core of variousspintronic devices such as magnetoresistive memories; however, the limitedmaterial selection of (001)-type MTJs hinders the further development ofspintronic devices. Here, as an alternative to the (001)-type MTJs, anfcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe isexplored to introduce close-packed lattice systems into MTJs. Using anatomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth ofthe CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces areconfirmed due to the introduction of periodic dislocations by forming a 5:6in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnelmagnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetricdifferential conductance curves with respect to bias polarity are observed,indicating the achievement of nearly identical upper and lower MAO interfacequalities. Despite the charge-uncompensated (111) orientation for arock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarizedbarrier interfaces opens a promising avenue for expanding the design of MTJstructures.

Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure