English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The present work is concerned with studying accurately the energy-lossprocesses that control the thermalization of hot electrons and holes that aregenerated by high-energy radiation in wurtzite GaN, using an ab initioapproach. Current physical models of the nuclear/particle physics communitycover thermalization in the high-energy range (kinetic energies exceeding ~100eV), and the electronic-device community has studied extensively carriertransport in the low-energy range (below ~10 eV). However, the processes thatcontrol the energy losses and thermalization of electrons and holes in theintermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorlyknown. The aim of this research is to close this gap, by utilizing densityfunctional theory (DFT) to obtain the band structure and dielectric function ofGaN for energies up to about 100 eV. We also calculate charge-carrierscattering rates for the major charge-carrier interactions (phonon scattering,impact ionization, and plasmon emission), using the DFT results and first-orderperturbation theory. With this information, we study the thermalization ofelectrons starting at 100 eV using the Monte Carlo method to solve thesemiclassical Boltzmann transport equation. Full thermalization of electronsand holes is complete within ~1 and 0.5 ps, respectively. Hot electronsdissipate about 90% of their initial kinetic energy to the electron-hole gas(90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impactionization at high energies. The remaining energy is lost more slowly as phononemission dominates at lower energies (below ~10 eV). During the thermalization,hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12pairs per hot electron). Additionally, during the thermalization, the maximumelectron displacement from its original position is found to be on the order of100 nm.

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors