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Angle-resolved photoemission spectroscopy (ARPES) is one of the mostubiquitous characterization techniques utilized in the field of condensedmatter physics. The resulting spectral intensity consists of a coherent andincoherent part, whose relative contribution is governed by atomic disorder,where thermal contribution is expressed in terms of the Debye-Waller factor(DWF). In this work, we present a soft-X-ray study on the sputter-induceddisorder of InAs(110) surface. We define a new quantity, referred to as thecoherence factor FC, which is the analogue of the DWF, extended to staticdisorder. We show that FC alone can be used to quantify the depletion ofcoherent intensity with increasing disorder, and, in combination with the DWF,allows considerations of thermal and static disorder effects on the samefooting. Our study also unveils an intriguing finding: as disorder increases,the ARPES intensity of quantum well states originating from the conduction banddepletes more rapidly compared to the valence bands. This difference can beattributed to the predominance of quasi-elastic defect scattering and thedifference in phase space available for such scattering for conduction-band(CB) and valence-band (VB) initial states. Specifically, the absence of emptystates well below the Fermi energy (EF) hinders the quasi-elastic scattering ofthe VB states, while their abundance in vicinity of EF enhances the scatteringrate of the CB states. Additionally, we observe no noticeable increase inbroadening of the VB dispersions as the sputter-induced disorder increases.This observation aligns with the notion that valence initial states are lesslikely to experience the quasi-elastic defect scattering, which would shortentheir lifetime, and with the random uncorrelated nature of the defectsintroduced by the ion sputtering.

Static disorder in soft X-ray angle-resolved photoemission spectroscopy: theory and application to ion-bombarded InAs(110)