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Thin layers of orthorhombic uranium ({\alpha}-U) have been grown ontobuffered sapphire substrates by d.c. magnetron sputtering, resulting in thediscovery of new epitaxial matches to Ti(00.1) and Zr(00.1) surfaces. Thesesystems have been characterised by X-ray diffraction and reflectivity and theoptimal deposition temperatures have been determined. More advanced structuralcharacterisation of the known Nb(110) and W(110) buffered {\alpha}-U systemshas also been carried out, showing that past reports of the domain structuresof the U layers are incomplete. The ability of this low symmetry structure toform crystalline matches across a range of crystallographic templateshighlights the complexity of U metal epitaxy and points naturally towardstudies of the low temperature electronic properties of {\alpha}-U as afunction of epitaxial strain.

Structural properties of epitaxial {\alpha}-U thin films on Ti, Zr, W and Nb