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We demonstrate indirect electric-field control of ferromagnetic resonance(FMR) in devices that integrate the low-loss, molecule-based, room-temperatureferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanicallycoupled to PMN-PT piezoelectric transducers. Upon straining the V[TCNE]$_x$films, the FMR frequency is tuned by more than 6 times the resonant linewidthwith no change in Gilbert damping for samples with $\alpha = 6.5 \times10^{-5}$. We show this tuning effect is due to a strain-dependent magneticanisotropy in the films and find the magnetoelastic coefficient $|\lambda_S|\sim (1 - 4.4)$ ppm, backed by theoretical predictions from DFT calculationsand magnetoelastic theory. Noting the rapidly expanding application space forstrain-tuned FMR, we define a new metric for magnetostrictive materials,$\textit{magnetostrictive agility}$, given by the ratio of the magnetoelasticcoefficient to the FMR linewidth. This agility allows for a direct comparisonbetween magnetostrictive materials in terms of their comparative efficacy formagnetoelectric applications requiring ultra-low loss magnetic resonancemodulated by strain. With this metric, we show V[TCNE]$_x$ is competitive withother magnetostrictive materials including YIG and Terfenol-D. This combinationof ultra-narrow linewidth and magnetostriction in a system that can be directlyintegrated into functional devices without requiring heterogeneous integrationin a thin-film geometry promises unprecedented functionality for electric-fieldtuned microwave devices ranging from low-power, compact filters and circulatorsto emerging applications in quantum information science and technology.

$\textit{In situ}$ electric-field control of ferromagnetic resonance in the low-loss organic-based ferrimagnet V[TCNE]$_{x\sim 2}$