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Physical vapor high-temperature deposition of CdTe thin films is one of themain methods for preparing high-efficiency CdTe solar cells, buthigh-temperature deposition also has an impact on the internal structure of thefilm. The difference in thermal expansion coefficients between the substrateand CdTe leads to the generation of internal stress in the CdTe thin filmduring the cooling process. In this work, we prepared thin films with differentsubstrate temperatures using a homemade GVD device, and observed by SEM thatthe crystallization quality of the film gradually improved with the increase ofsubstrate temperature, but accompanied by the shift of XRD peak position. Wecalculated the internal stress situation of the film by the shift amount, andthe possible causes of stress generation were speculated by the results of TEMand SAED to be the combined effects of the different thermal expansioncoefficients between the substrate and the film and the stacking fault defectsinside the film.

The effect of substrate temperature on cadmium telluride films in high temperature vapor deposition process