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We use co-sputtering to directly synthesize thin films of the A15 phaseintermetallic compound Ta3Sb, which has been predicted to have a giant spinHall conductivity. We identify a large window of Ta:Sb flux ratio thatstabilizes single-phase A15 Ta3Sb. Composition analyses of these films show aTa:Sb atomic ratio of 4:1, which is consistent with the known Ta-Sb phasediagram. The spin Hall conductivity of thin film Ta3Sb is -3400+/-400 (hbar/2e)S/cm and the spin-orbit torque efficiency is -0.6+/-0.1 at 20 K, as determinedfrom harmonic Hall measurements of Ta3Sb/permalloy bilayer structures. Thesegiant values make Ta3Sb a promising material for efficient charge-to-spinconversion in spintronic applications. Large field-like spin-orbit effectivefields that are independent of the ferromagnetic layer thickness have also beenmeasured in the Ta3Sb/permalloy bilayers. We attribute the field-likespin-orbit effective field to the Rashba effect at the interface.

A15 Phase Ta3Sb Thin Films: Direct Synthesis and Giant Spin-Orbit Effects