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Pb-free ferroelectric thin films are gaining attention due to theirapplicability in memory, sensor, actuator, and microelectromechanical system.In this work, Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ (NKBT0.1) ferroelectric thinfilms were deposited on Pt(111)/Ti/SiO$_2$/Si substrates using the pulsed laserdeposition technique at various substrate temperatures (600-750 $^\circ$C). Thecomprehensive structural, microstructural, and ferroelectric propertiescharacterizations depicted that the grain size, dielectric constant, andremnant polarization increased with higher deposition temperatures. Theinfluence of higher substrate temperatures on the control of (100)-preferentialorientations was observed, indicating the importance of deposition conditions.Significantly, films deposited at 700 deg C exhibited reduced dielectric lossof 0.08 (at 1kHz), high dielectric constant of 673, and remnant polarization of17 microC/cm2 at room temperature. At this deposition temperature, a maximumeffective piezoelectric coefficient of 76 pm/V was availed. Based on thestructural analysis, dielectric properties, and ferroelectric behavior, theoptimal deposition temperature for the NKBT0.1 thin films was 700 $^\circ$C.This study contributes to the understanding of the influence of substratetemperature on the structural and ferroelectric properties of Pb-free NKBT0.1thin films, providing insights for the development of high-performanceferroelectric devices.

Substrate temperature dependent dielectric and ferroelectric properties  of (100) oriented lead-free Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ thin films  grown by pulsed laser deposition