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Integrated thin film lithium niobate (TFLN) modulators are emerging as anappealing solution to high-speed data processing and transmission due to theirhigh modulation speed and low driving voltage. The key step in fabricatingintegrated TFLN modulators is the high-quality etching of TFLN, which typicallyrequires long-term optimization of fabrication recipe and specializedequipment. Here we present an integrated TFLN modulator by incorporatinglow-index rib loaded waveguides onto TFLN without direct etching of TFLN. Basedon our systematic investigation into the theory and design methodology of theproposed design, we experimentally demonstrated a TFLN etching-freeMach-Zehnder modulator, featuring a flat electro-optic response up to 110 GHzand a voltage-length product of 2.53 V cm. By significantly simplifying thefabrication process, our design opens up new ways of mass production ofhigh-speed integrated TFLN modulators at low cost.

110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching