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Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal(HM) under the ferromagnetic resonance (FMR) condition, we report anenhancement in effective damping in $\beta$- W/Py bilayers by systematicallyvarying resistivity ($\rho_{W}$) of $\beta$-W films. Different resistivityranging from 100 $\mu\Omega$-cm to 1400 $\mu\Omega$-cm with a thickness of 8 nmcan be achieved by varying the argon pressure ($P_{Ar}$) during the growth bythe method of sputtering. The coefficient of effective damping $\alpha_{eff}$is observed to increase from 0.010 to 0.025 with $\rho_{W}$, which can bemodulated by $P_{Ar}$. We observe a modest dependence of $\alpha_{eff}$ on thesputtering power ($p_{S}$) while keeping the $P_{Ar}$ constant. $\alpha_{eff}$dependence on both $P_{Ar}$ and $p_{S}$ suggests that there exists a strongcorrelation between $\alpha_{eff}$ and $\rho_{W}$. It is thus possible toutilize $\rho_{W}$ as a tuning parameter to regulate the $\alpha_{eff}$, whichcan be advantageous for faster magnetization dynamics switching. The thicknessdependence study of Py in the aforementioned bilayers manifests a higher spinmixing conductance ($g^{\uparrow\downarrow}_{eff}$) which suggests a strongspin pumping from Py into the $\beta$-W layer. The effective spin current($J_{S(eff)}$) is also evaluated by considering the spin-back flow in thisprocess. Intrinsic spin mixing conductance ($g^{\uparrow\downarrow}_{W}$) andspin diffusion length ($\lambda_{SD}$) of $\beta$-W are additionallyinvestigated using thickness variations in $\beta$-W. Furthermore, thelow-temperature study in $\beta$-W/Py reveals an intriguing temperaturedependence in $\alpha_{eff}$ which is quite different from $\alpha_{b}$ ofsingle Py layer and the enhancement in $\alpha_{eff}$ at low temperature can beattributed to the spin-induced pumping from Py layer into $\beta$-W.

Modulating Spin Current Induced Effective Damping in $\beta-W/Py$  Heterostructures by a Systematic Variation in Resistivity of the Sputtered  Deposited $\beta-W$ films