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Superconductor/topological material heterostructures are intensively studiedas a platform for topological superconductivity and Majorana physics. However,the high cost of nanofabrication and the difficulty of preparing high-qualityinterfaces between the two dissimilar materials are common obstacles thathinder the observation of intrinsic physics and the realisation of scalabletopological devices and circuits. Here, we demonstrate an innovative method todirectly draw nanoscale superconducting beta-tin (beta-Sn) patterns of anyshape in the plane of a topological Dirac semimetal (TDS) alpha-tin (alpha-Sn)thin film by irradiating a focused ion beam (FIB). We utilise the property thatalpha-Sn undergoes a phase transition to superconducting beta-Sn upon heatingby FIB. In beta-Sn nanowires embedded in a TDS alpha-Sn thin film, we observegiant non-reciprocal superconducting transport, where the critical currentchanges by 69% upon reversing the current direction. The superconducting dioderectification ratio reaches a maximum when the magnetic field is appliedparallel to the current, distinguishing itself from all the previous reports.Moreover, it oscillates between alternate signs with increasing magnetic fieldstrength. The angular dependence of the rectification ratio on the magneticfield and current directions is similar to that of the chiral anomaly effect inTDS alpha-Sn, suggesting that the non-reciprocal superconducting transport mayoccur at the beta-Sn/alpha-Sn interfaces. The ion-beam patterned Sn-basedsuperconductor/TDS planar structures thus show promise as a universal platformfor investigating novel quantum physics and devices based on topologicalsuperconducting circuits of any shape.

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures