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Magnetic skyrmions are topological spin textures which are envisioned asnanometre scale information carriers in magnetic memory and logic devices. Therecent demonstration of room temperature stabilization of skyrmions and theircurrent induced manipulation in industry compatible ultrathin films were firststeps towards the realisation of such devices. However, important challengesremain regarding the electrical detection and the low-power nucleation ofskyrmions, which are required for the read and write operations. Here, wedemonstrate, using operando magnetic microscopy experiments, the electricaldetection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) andits nucleation and annihilation by gate voltage via voltage control of magneticanisotropy. The nucleated skyrmion can be further manipulated by both gatevoltage and external magnetic field, leading to tunable intermediate resistancestates. Our results unambiguously demonstrate the readout and voltagecontrolled write operations in a single MTJ device, which is a major milestonefor low power skyrmion based technologies.

Electrical detection and nucleation of a magnetic skyrmion in a magnetic tunnel junction observed via operando magnetic microscopy