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Yttrium iron garnet (YIG) is a prototypical material in spintronics due toits exceptional magnetic properties. To exploit these properties high qualitythin films need to be manufactured. Deposition techniques like sputterdeposition or pulsed laser deposition at ambient temperature produce amorphousfilms, which need a post annealing step to induce crystallization. However, notmuch is known about the exact dynamics of the formation of crystalline YIG outof the amorphous phase. Here, we conduct extensive time and temperature seriesto study the crystallization behavior of YIG on various substrates and extractthe crystallization velocities as well as the activation energies needed topromote crystallization. We find that the type of crystallization as well asthe crystallization velocity depend on the lattice mismatch to the substrate.We compare the crystallization parameters found in literature with our resultsand find an excellent agreement with our model. Our results allow us todetermine the time needed for the formation of a fully crystalline film ofarbitrary thickness for any temperature.

Crystallization Dynamics of Amorphous Yttrium Iron Garnet Thin Films