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Magnetic tunneling junctions (MTJs) are essential for non-volatilemagneto-resistive random access memory (MRAM) applications. Here, we report theobservation of a large negative tunneling magneto-resistance (TMR) in theCoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Throughthe thickness modulation of the MgO barrier, the negative TMR component can beenhanced up to 20% under a negative voltage bias. Moreover, the tunnelanisotropic magneto-resistance measurements unveil that the negative TMRcomponent likely arises from the interfacial resonance states (IRS) in theminority band of the bottom ferromagnetic layer. Complementary first principlecalculations further quantify the IRS location and strength with respect to theFermi level position. Our work not only confirm the vital role of IRS in theelectrical transport of MTJ, but also provide valuable insights for the designof new-generation voltage-controlled MRAM and related spintronic applications.

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB