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Spins in semiconductor quantum dots hold great promise as building blocks ofquantum processors. Trapping them in SiMOS transistor-like devices eases futureindustrial scale fabrication. Among the potentially scalable readout solutions,gate-based dispersive radiofrequency reflectometry only requires the alreadyexisting transistor gates to readout a quantum dot state, relieving the needfor additional elements. In this effort towards scalability, traveling-wavesuperconducting parametric amplifiers significantly enhance the readoutsignal-to-noise ratio (SNR) by reducing the noise below typical cryogeniclow-noise amplifiers, while offering a broad amplification band, essential tomultiplex the readout of multiple resonators. In this work, we demonstrate a3GHz gate-based reflectometry readout of electron charge states trapped inquantum dots formed in SiMOS multi-gate devices, with SNR enhanced thanks to aJosephson traveling-wave parametric amplifier (JTWPA). The broad, tunable 2GHzamplification bandwidth combined with more than 10dB ON/OFF SNR improvement ofthe JTWPA enables frequency and time division multiplexed readout of interdottransitions, and noise performance near the quantum limit. In addition, owingto a design without superconducting loops and with a metallic ground plane, theJTWPA is flux insensitive and shows stable performances up to a magnetic fieldof 1.2T at the quantum dot device, compatible with standard SiMOS spin qubitexperiments.

Broadband parametric amplification for multiplexed SiMOS quantum dot signals