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Half-metallic half-Heusler compounds with strong spin-orbit-coupling andbroken inversion symmetry in their crystal structure are promising materialsfor generating and absorbing spin-currents, thus enabling the electricmanipulation of magnetization in energy-efficient spintronic devices. In thiswork, we report the spin-to-charge conversion in sputtered ultrathin films ofthe half-Heusler compound MnPtSb with thickness (t) in the range from 1 to 6nm. A combination of X-ray and transmission electron microscopy measurementsevidence the epitaxial nature of these ultrathin non-centrosymmetric MnPtSbfilms, with a clear (111)-orientation obtained on top of (0001) single-crystalsapphire substrates. The study of the thickness (t)-dependent magnetizationdynamics of the MnPtSb(t)/Co(5nm)/Au(5nm) heterostructure revealed that theMnPtSb compound can be used as an efficient spin current generator, even atfilm thicknesses as low as 1 nm. By making use of spin pumping FMR, we measurea remarkable t-dependent spin-charge conversion in the MnPtSb layers, whichclearly demonstrate the interfacial origin of the conversion. When interpretedas arising from the inverse Edelstein effect (IEE), the spin-charge conversionefficiency extracted at room temperature for the thinnest MnPtSb layer reaches{\lambda}IEE~3 nm, representing an extremely high spin-charge conversionefficiency at room temperature. The still never explored ultrathin regime ofthe MnPtSb films studied in this work and the discover of their outstandingfunctionality are two ingredients which demonstrate the potentiality of suchmaterials for future applications in spintronics.

Giant spin-charge conversion in ultrathin films of the MnPtSb half-Heusler compound