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In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE)is a powerful tool for detecting the magnetic state and revealing intriguinginterfacial magnetic orderings. However, achieving a larger AHE at roomtemperature in oxide heterostructures is still challenging due to the dilemmaof mutually strong spin-orbit coupling and magnetic exchange interactions.Here, we exploit the Ru doping-enhanced AHE in LSMRO epitaxial films. As theB-site Ru doping level increases up to 20 percent, the anomalous Hallresistivity at room temperature can be enhanced from nOhmcm to uOhmcm scale. Rudoping leads to strong competition between ferromagnetic double-exchangeinteraction and antiferromagnetic super-exchange interaction. The resultantspin frustration and spin-glass state facilitate a strong skew-scatteringprocess, thus significantly enhancing the extrinsic AHE. Our findings couldpave a feasible approach for boosting the controllability and reliability ofoxide-based spintronic devices.

Ru doping induced spin frustration and enhancement of the room-temperature anomalous Hall effect in La2/3Sr1/3MnO3 films