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Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatiblefloating gate devices capable of detecting charges on their sensing area by therelative shifts in current-voltage (I-V) characteristics. The I-V shifts aregenerally computed by measuring the EGFET parameters in the strong inversionregion of operation. This could lead to errors in estimating the devicesensitivity because the simple I-V model ignores the mobility degradation andseries resistance effects in EGFETs. Our goal is to model these parasiticeffects and present methods to extract the key device parameters. We derive ananalytical I-V model for EGFETs in the linear region of transistor operation,accounting for both the mobility degradation and series resistance effects.Based on the analytical model, three methods are presented to estimate the keyparameters, namely the threshold voltage, series resistance, surface roughnessparameter, low-field mobility, and effective mobility from the I-Vcharacteristics, gate transconductance, and drain conductance. The peaktransconductance method is used as a benchmark for comparing the extractedthreshold voltages. Silicon-based EGFET devices are fabricated, and their I-Vcharacteristics are measured with deionized water and three polyelectrolytes.From the I-V data, the parameter extraction methods are used to compute thevalues of the key parameters, and the suitability of each method is discussed.The gate transconductance methods show good agreement between the values forthe key parameters, while the drain transconductance method gives lower valuesof the key parameters. There is scope to improve the presented methods byincorporating the effects of substrate bias and asymmetric series resistancefor new extended-gate device architectures, including solution-based organicfield-effect transistors.

Parameter extraction of Extended Floating Gate Field Effect Transistors  (EGFETs): Estimating the threshold voltage, series resistance, and mobility  degradation from I-V measurements