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In this paper, we demonstrate low-thermal-budget ferroelectric field-effecttransistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) andoxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatilememory windows of ~1 V, low off-state drain currents, and high carriermobilities. The ferroelectric CIPS layer serves a dual purpose by providingelectrostatic doping in IZO and acting as a passivation layer for the IZOchannel. We also investigate the CIPS/IZO FeFETs as artificial synaptic devicesfor neural networks. The CIPS/IZO synapse demonstrates a sizeable dynamic ratio(125) and maintains stable multi-level states. Neural networks based onCIPS/IZO FeFETs achieve an accuracy rate of over 80% in recognizing MNISThandwritten digits. These ferroelectric transistors can be vertically stackedon silicon CMOS with a low thermal budget, offering broad applications inCMOS+X technologies and energy-efficient 3D neural networks.

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO