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Van der Waals structures present a unique opportunity for tailoring materialinterfaces and integrating photonic functionalities. By precisely manipulatingthe twist angle and stacking sequences, it is possible to elegantly tune andfunctionalize the electronic and optical properties of layered van der Waalsstructures. Among these materials, two-dimensional hexagonal boron nitride(hBN) stands out for its remarkable optical properties and wide band gap,making it a promising host for solid state single photon emitters at roomtemperature. Previous investigations have demonstrated the observation ofbright single photon emission in hBN across a wide range of wavelengths. Inthis study, we unveil an application of van der Waals technology in modulatingtheir spectral shapes and brightness by carefully controlling the stackingsequences and polytypes. Our theoretical analysis reveals remarkably largevariations in the Huang-Rhys factors-an indicator of the interaction between adefect and its surrounding lattice-reaching up to a factor of 3.3 for the samedefect in different stackings. We provide insights into the underlyingmechanism behind these variations, shedding light on the design principlesnecessary to achieve rational and precise control of defect emission. This workpaves the way for enhancing defect identification and facilitating theengineering of highly efficient single photon sources and qubits using van derWaals materials.

Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences