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We report a comprehensive study of magneto-transport properties in MoSi$_2$bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm weredeposited on silicon substrates with different orientations. Giantmagnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$single crystals exhibit a magnetoresistance (MR) value of 800% at lowtemperatures. At the low temperatures, the MR of the textured thin films showweak anti-localization behaviour owing to the spin orbit coupling effects. Ourfirst principle calculation show the presence of surface states in thismaterial. The resistivity of all the MoSi$_2$ thin films is significantly lowand nearly independent of the temperature, which is important for electronicdevices.

Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations