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The synthesis of thin films of magnetic topological materials is necessary toachieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 isa recently predicted topological axion insulator that has an antiferromagneticground state and an inverted band structure, but that has only been synthesizedand studied as a single crystal. We report on the synthesis of c-axis orientedEuIn2As2 films on sapphire substrates by molecular beam epitaxy. By carefullytuning the substrate temperature during growth, we stabilize the Zintl phase ofEuIn2As2 expected to be topologically non-trivial. The magnetic properties ofthese films reproduce those seen in single crystals, but their resistivity isenhanced when grown at lower temperatures. We additionally find that themagnetoresistance of EuIn2As2 is negative even up to fields as high as 31T.while it is highly anisotropic at low fields, it becomes nearly isotropic athigh magnetic fields above 5T. Overall, the transport characteristics ofEuIn2As2 appear similar to those of chalcogenide topological insulators,motivating the development of devices to gate tune the Fermi energy and revealtopological features in quantum transport.

MBE growth of axion insulator candidate EuIn2As2