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The CERN RD50 collaboration develops depleted monolithic active pixel CMOSsensors for future colliders with the aim of high radiation tolerance, goodtime resolution, and high granularity pixel detectors. The most recentprototype, the RD50-MPW3, is a 150 nm High Voltage CMOS LFoundry chip thatfeatures pixels with a 62 $\mu$m pitch that integrate both digital and analogreadout electronics inside the sensing diodes. The 64 x 64 pixels on this chipare arranged in 32 double columns and have an optimized periphery for efficientconfiguration and fast serial data transmission. Post-layout simulations of asingle pixel show a power consumption of 22 $\mu$W per pixel and 9 ns timewalk. The predecessor of this version, the RD50-MPW2, was shown to matchsimulation results in tests at beam facilities and to have a time resolution of300 ps both before and after irradiation to a fluence of $\Phi_{\mathrm{eq}} =5\cdot 10^{14}/\mathrm{cm}^2$. This proceeding discusses the design of thelatest advanced prototype, the RD50-MPW3, the first results for the RD50-MPW3,and the performance of the RD50-MPW2.

Design and Performance of HV CMOS Sensors for Future Colliders by the RD50 Collaboration