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For the past few years, 2D ferroelectric materials have attracted stronginterest for their potential in future nanoelectronics devices. The recentdiscovery of 2D ferroelectricity in twisted layers of insulating hexagonalboron nitride, one of the most used 2D materials, has opened the route to itsintegration into complex van der Waals heterostructures combining hybridproperties. Here we show that opposite polarizations in ferroelectric domainsof a folded hBN layer can imprint local n and p doping in a semiconductingtransition metal dichalcogenide WSe2 monolayer. We demonstrate that WSe2 can beused as an optical probe of ferroelectricity in hBN and show that the dopingdensity and type can be controlled with the position of the semiconductor withrespect to the ferroelectric interface. Our results establish the ferroelectrichBN/WSe2 van der Waals stacking as a promising optoelectronic structure.

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride