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Antiferromagnetic Weyl semimetals with spin chirality offer excellentplatforms to address the Berry phase physics, which manifests prominently inseveral of their electro-optical and electro-magnetic responses including as alarge anomalous Hall effect (AHE) and spin Hall conductivity. Here, we reportmeasurements of magneto-transport in c-axis textured Mn3Sn thin films grown onthe [111] plane of single crystal MgO. At room temperature, these films displaya weak uncompensated magnetic moment of \approx 0.12 \micro_{B}/f.u. in thebasal plane and a longitudinal resistivity (\rho_{xx}) close to \approx 3.8\micro\Omega.m. A residual resistivity ration (\rho_{xx} (300 K)/\rho_{xx} (2K)) of \approx 3.92 further indicates the high quality of the films. While at300 K a weak AHE together with field-linear Hall resistivity (\rho_{xy}) isobserved in magnetic fields (H) applied perpendicular to the Kagome planes, thetemperature (T) dependence of \rho_{xy} shows prominent signatures of threemagnetic phases in the temperature regime of 2 to 300 K. The \rho_{xy} alsoderives a non-trivial topological contribution (\r{ho}THE \approx 1n\Omega.m)in the spin glass phase which appears at T \geq 100 K. Our measurements ofanisotropic magnetoresistance (AMR) and planar Hall effect (PHE) over a wideH-T phase space reveal the hitherto unseen effects in the three magnetic phasesof Mn3Sn. While the AMR and PHE are negative in the inverse triangular spinphase (250 K \geq T \geq TN), the helical phase (100 \geq T \geq 250 K) isdevoid of anisotropic in-plane resistivity, and the spin glass phase shows asign reversal of AMR with the increasing magnetic field. The origin of thissign change in AMR/PHE is attributed to the emergence of topologicallyprotected spin textures like skyrmions where the fictitious effective magneticfield is estimated to be \approx 4.4 tesla.

Planar Hall effect and Anisotropic Magnetoresistance in Thin Films of Chiral Antiferromagnet Mn3Sn