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Quantum anomalous Hall (QAH) insulators with high Chern number host multipledissipationless chiral edge channels, which are of fundamental interest andpromising for applications in spintronics and quantum computing. However, onlya limited number of high-Chern-number QAH insulators have been reported todate. Here, we propose a dynamic approach for achieving high-Chern-number QAHphases in periodically driven two-dimensional higher-order topologicalinsulators (HOTIs).In particular, we consider two representative kinds of HOTIswhich are characterized by a quantized quadruple moment and the secondStiefel-Whitney number, respectively. Using the Floquet formalism forperiodically driven systems, we demonstrate that QAH insulators with tunableChern number up to four can be achieved. Moreover, we show by first-principlescalculations that the monolayer graphdiyne, a realistic HOTI, is an idealmaterial candidate. Our work not only establishes a strategy for designinghigh-Chern-number QAH insulators in periodically driven HOTIs, but alsoprovides a powerful approach to investigate exotic topological states innonequilibrium cases.

Photoinduced High-Chern-Number Quantum Anomalous Hall Effect from Higher-Order Topological Insulators