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We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulkmultiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T)takes significant contribution from defects below T = 20 K however, a mixedscattering contribution from dynamic disorder and unusual sources is estimatedfrom T = 20 K to 300 K. The carrier mobility shows anomalous temperaturedependence from T0.2 to T0.5 which hints towards possible presence of polaroniceffects resulting from coupling of holes with phonons. This anomalous behaviorcannot be understood in terms of pure phononic scattering mechanism at hightemperature. From point of view of high field results, the transverse componentof magnetoresistivity manifests anomalous Hall effect originating fromextrinsic scattering sources, particularly the side jump mechanism reveals alarger contribution. We also find that the correlation between the transverseand longitudinal conductivities follow the universal scaling law {\sigma}xy ~{\sigma}xxn where n = 1.6 in the low conductivity limit. The values n = 1.5 to1.8 obtained for the present GSMT alloys justify the bad metal hopping regimesince the results fall in the low conductivity ferromagnetic family with{\sigma}xx ~ 104 ohmcm-1. The interpretation of the n = 1.6 scaling in the lowconductivity regime is thus far not fully understood. However, the anomalousHall resistivity scaling with modified relation by Tian et al is indicative ofthe dominant side jump scattering along with noticeable role of skewscattering.

Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime