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In this paper, we propose a high-precision SRAM-based CIM macro that canperform 4x4-bit MAC operations and yield 9-bit signed output. The inherentdischarge branches of SRAM cells are utilized to apply time-modulated MAC and9-bit ADC readout operations on two bit-line capacitors. The same principle isused for both MAC and A-to-D conversion ensuring high linearity and thussupporting large number of analog MAC accumulations. The memory cell-embeddedADC eliminates the use of separate ADCs and enhances energy and areaefficiency. Additionally, two signal margin enhancement techniques, namely theMAC-folding and boosted-clipping schemes, are proposed to further improve theCIM computation accuracy.

A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications