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We combine ab-initio calculations based on many-body perturbation theory andthe cumulant expansion with angle-resolved photoemission spectroscopy (ARPES)to quantify the electron-plasmon interaction in the highly-doped semiconductingtransition metal dichalcogenide 1$T$-HfS$_2$. ARPES reveals the emergence ofsatellite spectral features in the vicinity of quasiparticle excitations at thebottom of the conduction band, suggesting coupling to bosonic excitations witha characteristic energy of 200 meV. Our first-principles calculations of thephotoemission spectral function reveal that these features can be ascribed toelectronic coupling to carrier plasmons (doping-induced collectivecharge-density fluctuations). We further show that reduced screening at thesurface enhances the electron-plasmon interaction and is primarily responsiblefor the emergence of plasmonic polarons.

Plasmonic polarons induced by alkali-atom deposition in hafnium disulfide (1$T$-HfS$_2$)