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In-memory computing on a reconfigurable architecture is the emerging fieldwhich performs an application-based resource allocation for computationalefficiency and energy optimization. In this work, we propose a FerroelectricMirrorBit-integrated field-programmable reconfigurable memory. We show theconventional 1-Bit FeFET, the MirrorBit, and MirrorBit-based TernaryContent-addressable memory (MCAM or MirrorBit-based TCAM) within the samefield-programmable array. Apart from the conventional uniform Up and Downpolarization states, the additional states in the MirrorBit are programmed byapplying a non-uniform electric field along the transverse direction, whichproduces a gradient in the polarization and the conduction band energy. Thiscreates two additional states, thereby, creating a total of 4 states or 2-bitof information. The gradient in the conduction band resembles a Schottkybarrier (Schottky diode), whose orientation can be configured by applying anappropriate field. The TCAM operation is demonstrated using the MirrorBit-baseddiode on the reconfigurable array. The reconfigurable array architecture canswitch from AND-type to NOR-type and vice-versa. The AND-type array isappropriate for programming the conventional bit and the MirrorBit. TheMirrorBit-based Schottky diode in the NOR-array resembles a crossbar structure,which is appropriate for diode-based CAM operation. Our proposed memory systemcan enable fast write via 1-bit FeFET, the dense data storage capability byMirror-bit technology and the fast search capability of the MCAM. Further, thedual configurability enables power, area and speed optimization making thereconfigurable Fe-Mirrorbit memory a compelling solution for In-memory andassociative computing.

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications