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We investigate the effective Lande factor in semiconductor nanowires withstrong Rashba spin-orbit coupling. Using the $\mathbf{k}\cdot\mathbf{p}$ theoryand the envelope function approach we derive a conduction band Hamiltonianwhere the tensor $g^*$ is explicitly related to the spin-orbit couplingconstant $\alpha_R$. Our model includes orbital effects from the Rashbaspin-orbit term, leading to a significant enhancement of the effective Landefactor which is naturally anisotropic. For nanowires based on the low-gap, highspin-orbit coupled material InSb, we investigate the anisotropy of theeffective Lande factor with respect to the magnetic field direction, exposing atwofold symmetry for the bottom gate architecture. The anisotropy results fromthe competition between the localization of the envelope function and the spinpolarization of the electronic state, both determined by the magnetic fielddirection.

Enhancement and anisotropy of electron Lande factor due to spin-orbit interaction in semiconductor nanowires