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Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 isachieved using a gallium gradient to increase the band gap of the absorbertowards the back side. Although this structure has successfully reducedrecombination at the back contact, we demonstrate that in industrial absorbersgrown in the pilot line of Avancis, the back part is a source of non-radiativerecombination. Depth-resolved photoluminescence (PL) measurements reveal twomain radiative recombination paths at 1.04 eV and 1.5-1.6 eV, attributed to twophases of low and high band gap material, respectively. Instead of a continuouschange in the band gap throughout the thickness of the absorber, we propose amodel where discrete band gap phases interlace, creating an apparent gradient.Cathodoluminescence and Raman scattering spectroscopy confirm this result.Additionally, deep defects associated to the high gap phase reduce the absorberperformance. Etching away the back part of the absorber leads to an increase ofone order of magnitude in the PL intensity, i.e., 60 meV in quasi Fermi levelsplitting. Non-radiative voltage losses correlate linearly with the relativecontribution of the high energy PL peak, suggesting that reducing the high gapphase could increase the open circuit voltage by up to 180 mV.

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases