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The discovery of magnetism in van der Waals (vdW) materials has establishedunique building blocks for the research of emergent spintronic phenomena. Inparticular, owing to their intrinsically clean surface without dangling bonds,the vdW magnets hold the potential to construct a superior interface thatallows for efficient electrical manipulation of magnetism. Despite severalattempts in this direction, it usually requires a cryogenic condition and theassistance of external magnetic fields, which is detrimental to the realapplication. Here, we fabricate heterostructures based on Fe3GaTe2 flakes thatpossess room-temperature ferromagnetism with excellent perpendicular magneticanisotropy. The current-driven non-reciprocal modulation of coercive fieldsreveals a high spin-torque efficiency in the Fe3GaTe2/Pt heterostructures,which further leads to a full magnetization switching by current. Moreover, wedemonstrate the field-free magnetization switching resulting from out-of-planepolarized spin currents by asymmetric geometry design. Our work could expeditethe development of efficient vdW spintronic logic, memory and neuromorphiccomputing devices.

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet