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ScAlN is an emerging ferroelectric material that possesses large band gap,strong piezoelectricity, and holds great promises for enhanced \chi^{(2)}nonliearity. In this study, we demonstrate high-fidelity ferroelectric domainswitching and periodic poling of Al-polar ScAlN thin film epitaxially grown onon c-axis sapphire substrate using gallium nitride as a buffer layer. Uniformpoling of ScAlN with periods ranging from 2 um to 0.4 um is realized. Theability to lithographically control the polarization of epitaxial ScAlNpresents a critical advance for its further exploitation in ferroelectricstorage and nonlinear optics applications.

Domain control and periodic poling of epitaxial ScAlN