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We demonstrate non-volatile optical functionality by embedding multi-layer$HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Simemristor facilitates non-volatile optical functionality for a variety ofdevices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaverfilters. The MZI optical memristor exhibits non-volatile optical phase shifts$> \pi (\Delta n_{g} > 2.70 \times 10^{-3}$) with ~ 30 dB extinction ratiowhile consuming 0 electrical power consumption in a true "set-and-forget"operation. We demonstrate 6 non-volatile states with each state capable of 4Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibitmemristive non-volatile passband transformation with full set/reset states.Time duration tests were performed on all devices and indicated non-volatilityup to 24 hours and most likely beyond. To the best of our knowledge, we havedemonstrated for the first time, non-volatile III-V/Si optical memristors withthe largest electric-field driven phase shifts and reconfigurable filters withthe lowest power consumption.

Energy-Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters