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Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at.% Si were prepared by reactive RF magnetron co-sputtering. Mechanical andstructural properties were measured by indentation and specular reflectanceinfrared spectroscopy at varying Si sputtering target power and substratetemperature in the range 100 to 500 {\deg}C. It was found that an increasedsubstrate temperature and Al/Si ratio give denser structure and consequentlyhigher hardness (7.4 to 9.5 GPa) and reduced elastic modulus (85 to 93 GPa)while at the same time lower crack resistance (2.6 to 0.9 N). The intensity ofthe infrared Si-O-Si/Al asymmetric stretching vibrations shows a lineardependence with respect to Al concentration. The Al-O-Al vibrational band (at1050 cm-1) shifts towards higher wavenumbers with increasing Al concentrationwhich indicates a decrease of the bond length, evidencing denser structure andhigher residual stress, which is supported by the increased hardness. The sameAl-O-Al vibrational band (at 1050 cm-1) shifts towards lower wavenumber withincreasing substrate temperature indicating an increase in the of the averagecoordination number of Al.

Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering