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For quantum electronics, the possibility to finely tune the properties ofmagnetic topological insulators (TIs) is a key issue. We studied solidsolutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ andnonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001,respectively. For high-quality, large mixed crystals ofGe$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magneticproperties, composition-independent pairwise exchange interactions along withan easy magnetization axis. The bulk band gap gradually decreases to zero for$x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phasetransitions (TPTs) between topologically nontrivial phases and the semimetalstate. The TPTs are driven purely by the variation of orbital contributions. Bytracing the x-dependent $6p$ contribution to the states near the fundamentalgap, the effective spin-orbit coupling variation is extracted. As $x$ varies,the maximum of this contribution switches from the valence to the conductionband, thereby driving two TPTs. The gapless state observed at $x=0.42$ closelyresembles a Dirac semimetal above the Neel temperature and shows a magnetic gapbelow, which is clearly visible in raw photoemission data. The observedbehavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates anability to precisely control topological and magnetic properties of TIs.

Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$