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Cuprate superconductors are strongly sensitive materials to disorder andoxygen stoichiometry; even minute variations of those parameters drasticallychange their electronic properties. Here we exploit this characteristic toengineer a memristive device based on the high-T_C superconductor YBa2Cu3O7-x(YBCO), in which local changes of the oxygen content and induced disorder areexploited to produce memory effects. These effects are triggered electricallyin a three-terminal device whose structure is reminiscent of a transistor,consisting of a YBCO channel and an Al gate. The Al/YBCO interface, whichcontrols the gate conductance, displays a giant, bipolar, reversible switchingacross a continuum of non-volatile conductance states that span over twoDecades. This phenomenon is controlled by the gate voltage magnitude and iscaused by oxygen exchange between YBCO and Al. Concomitantly, the channel showsa gradual, irreversible superconductor-to-insulator transition that retains amemory of the power dissipated in the device, and can be explained by inducedbulk disorder. The observed effects, and the understanding of the interplaybetween the underlying mechanisms, constitute interesting ingredients for thedesign and realization of novel memristors and switches for superconductingelectronics.

Memristive effects in YBa2Cu3O7-x devices with transistor-like structure