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Optically detected magnetic resonance (ODMR) is an efficient mechanism toreadout the spin of solid-state color centers at room temperature, thusenabling spin-based quantum sensors of magnetic field, electric field, andtemperature with high sensitivity and broad commercial applicability. Themechanism of room temperature ODMR is based on spin-dependent relaxationbetween the optically excited states to the ground states, and thus it is anintrinsic property of a defect center. In this work we report that two distinctdefect types exist in GaN based on their ODMR signatures. One group has smallnegative ODMR based on a spin in a metastable state. The second group has large(up to $\sim$30\%) positive ODMR contrast based on ground-state spin. BecauseGaN is a mature semiconductor with well-developed electronic technologiesalready developed, this defect platform is promising for integrated quantumsensing applications.

Room temperature optically detected magnetic resonance of single spins in GaN