English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

In order to achieve ultrafast response in MgZnO based self-powered Schottkytype photodetectors, it is crucial to decrease both the junction capacitanceand carrier transit time. To meet these criteria, Au/MgZnO/ITO Schottkyjunction photodetectors have been realised in crossbar pattern, wherein thethickness of the MgZnO thin film deposited on patterned ITO-glass substrate is~ 200 nm and the cross-sectional area of the devices is 0.032 mm2. Thesemi-transparent 10 nm Au electrode on top of the MgZnO film serves as theSchottky electrode through which light enters the devices. The verticalgeometry of the crossbar pattern and the associated small device cross-sectionresults in a low junction capacitance of the devices of ~ 27 pF at zero bias,which in turn produces very fast visible blind self-powered ultraviolet (UV)photoresponse with both the rise and fall times of ~ 1.5 microsecond. Thedevices also demonstrate a peak responsivity of ~ 49 mA/W at ~ 280 nm with acut-off wavelength of 336 nm. These Au/MgZnO/ITO Schottky photodetectors incrossbar pattern, with optimized device area, could be useful in applicationsrequiring fast response, such as UV communication and UV imaging.

Ultrafast Self-powered Visible Blind UV Photodetectors based on MgZnO Vertical Schottky Junction in Crossbar Geometry