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Silicon-based fast time detectors have been widely used in high energyphysics, nuclear physics, space exploration and other fields in recent years.However, silicon detectors often require complex low-temperature systems whenoperating in irradiation environment, and their detection performance decreasewith the increase of irradiation dose. Compared with silicon, silicon carbide(SiC) has a wider bandgap, higher atomic displacement energy, saturatedelectron drift velocity and thermal conductivity. Simultaneously, the low gainavalanche detector avoids crosstalk and high noise from high multiplication dueto its moderate gain, and thus can maintain a high detector signal withoutincreasing noise. Thus, the 4H-SiC particle detector, especially the low gainavalanche detector has the potential to detect the minimal ionized particles(MIPs) under extreme irradiation and high temperature environments. In thiswork, the emphasis was placed on the design of a 4H-SiC Low Gain AvalancheDetector (LGAD), especially the epitaxial structure and technical process whichplayed the main roles. In addition, a simulation tool--RASER(RAdiationSEmiconductoR) was developed to simulate the performances including theelectrical properties and time resolution of the 4H-SiC LGAD we proposed. Theworking voltage and gain effectiveness of the LGAD were verified by thesimulation of electrical performances. The time resolution of the LGAD is (35.0$\pm$ 0.2) ps under the electrical field of -800 V, which is better than thatof the 4H-SiC PIN detector.

Design and simulation of a novel 4H-SiC LGAD timing device